Surface passivation for III-V semiconductor processing
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Surface passivation for III-V semiconductor processing stable gallium sulphide films by MOCVD by

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Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, D.C.], [Springfield, Va .
Written in English

Subjects:

  • Gallium.,
  • Gallium arsenides.,
  • Metalorganic chemical vapor deposition.,
  • MIS (Semiconductors),
  • Passivity.,
  • Semiconductors (Materials),
  • Structural analysis.,
  • Sulfides.,
  • Vapor deposition.

Book details:

Edition Notes

Other titlesSurface passivation for 3-5 semiconductor processing.
StatementAndrew N. MacInnes ... [et al.].
SeriesNASA technical memorandum -- 106761.
ContributionsMacInnes, Andrew N., United States. National Aeronautics and Space Administration.
The Physical Object
FormatMicroform
Pagination1 v.
ID Numbers
Open LibraryOL15409143M

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Get this from a library! Surface passivation for III-V semiconductor processing: stable gallium sulphide films by MOCVD. [Andrew N MacInnes; United States. National Aeronautics and Space Administration.;]. 4. Surface passivation using silicon interface control layer (Si ICL) Basic principle of Si ICL-base passivation. As explained in the previous section, direct formation of an insulator film on III–V Cited by: First, effects of surface states in nanoscale devices are discussed with a brief review of currently available surface passivation technologies for III–V materials. Then, the basic principle and Cited by: Get this from a library! Compound semiconductor surface passivation and novel device processing: symposium held April , , San Francisco, California, U.S.A.. [H Hasegawa;].

signifies that a semiconductor surface becomes less chemi-cally active and in the process fewer active recombination centers form on the surface and ~or! these centers themselves become less active. . Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically the metal–oxide–semiconductor (MOS) devices used in the integrated circuit (IC) chips that are . Mohamed Mohamed Atalla (Arabic: محمد محمد عطاالله ‎; August 4, – Decem ) was an Egyptian–American engineer, physical chemist, cryptographer, inventor and Born: August 4, , Port Said, Egypt. A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by Cited by:

T1 - Reaction mechanisms on binary III-V semiconductor surfaces during etching, passivation, and deposition. AU - Muscat, Anthony J. PY - Y1 - N2 - Etching of the natives oxides of the III . Surface passivation of III-V compound semiconductor surfaces is well documented [4] as a means to address the detrimental effects coming from high-density surface states and related Fermi level. the oxidation of III-V semiconductor surface and in particular at Surface Modification of III-V Compounds Substrates for Processing Technology passivation is to reduce the surface state. SURFACE PASSIVATION FOR III-V SEMICONDUCTOR PROCESSING: STABLE GALLIUM SULPHIDE FILMS BY MOCVD Andrew N. MaclnnesA, Phillip P. JenkinsB', Michael B. PowerA, Soon KangC, .